Proceedings of The Third International Workshop on the Measurement
and Characterization of Ultra-Shallow Doping Profiles in
Semiconductors

     The Proceedings has appeared in the Journal of Vacuum
     Science and Technology - Part B, Vol. 14, No. 1, pp. 192-462
     (January/February 1996).  The 1995 Workshop was held
     March 20-22, 1995 at MCNC in North Carolina as the third in
     a biennial series.  The Workshop was cosponsored by
     American Vacuum Society, Intel, MCNC's Center for
     Microelectronics, the NIST Office of Microelectronics
     Programs, and SEMATECH.  These biennial Workshops have
     a unique character in that they deal with a single topic, dopant
     distributions in ultra-shallow layers, in a manner that is deeper
     than would be found in a Semiconductor Characterization
     Symposium of a major professional society, and yet broader
     than in a highly specialized conference on a single analytic
     capability such as SIMS.

     The topic of dopant profile measurement has long been
     important for process development and process monitoring.
     Rapid shrinking of device dimensions, now requiring vertical
     junctions depths of 100 nm or less, has continually challenged
     the best of profiling techniques in one dimension.  Recent
     needs of TCAD for accurate two-dimensional profiles, as
     articulated in the SIA roadmap, have added significant
     complexity to the challenge.  There is concern that insufficient
     progress in dopant profiling capability could be a
     "show-stopper" in meeting the roadmap goals.

     The Workshop Proceedings feature keynote talks on the
     challenges of gigascale integration, the needs and requirements
     of TCAD for profile information, the pragmatic considerations
     of profile analysis in a corporate analytic service lab, and a
     status and overview of 2-dimensional dopant profiling.

     An additional 43 papers by authors from ten different countries
     are presented, covering process model verification,
     sputter-depth profiling, spreading resistance profiling and other
     electrical techniques, electron microscopy, and scanning probe
     techniques for dopant profile extraction.