XI International Conference on
Ion Implantation Technology
Preliminary Program
June 16-21 1996
Plenary Session
Monday, June 17, 8:30 a.m.
Co-Chairs: Larry Larson, SEMATECH
Al Tasch, University of Texas at Austin
8:30 a.m.
Welcome and Opening Remarks
8:50 a.m.
P.1 Plenary Talk I
9:20 a.m.
P.2 Challenges for Ion Beam Processing of Semiconductors, J.M. Poate,
Bell Laboratories, Lucent Technologies, Murray Hill, NJ
10:00 a.m. Break
Session 1: Ion-Solid Interactions
Monday, June 17, 10:20 a.m.
Co-Chairs: Mark Law , University of Florida at Gainesville
Tomas Diaz de la Rubia , Lawrence Livermore National Laboratory
10:20 a.m.
1.1 Atomic Scale Modeling of Ion Implantation and Dopant Diffusion in
Silicon (Invited Paper)
T. Diaz de la Rubia, M.J. Caturla, M. Tang, J. Zhu, O. Pankratov,
G.H. Gilmer*, M. Jaraiz*, and L. Colombo***, Lawrence Livermore
National Laboratory, Livermore, CA; *Lucent Technologies, Murray
Hill, NJ; **University of Milan, Milan, Italy
10:50 a.m.
1.2 Understanding Implant Damage by Implant Channeling Profile
Measurements
P. Packan, H. Kennel, S. Thompson, S. Corcoran, and M. Taylor,
Intel Corp., Hillsboro, OR
11:10 a.m.
1.3 Comparisons of UT-MARLOWE Predictions of Implant-Induced Damage
with Experimentally Measured Amorphous Layer Thicknesses
M. Morris, S. Tian, S. Morris, B. Obradovic, A.F. Tasch, R.
Hummel*, S. Baumann**, University of Texas, Austin, TX; *University of
Florida, Gainesville, FL; **Evans Texas, Austin, TX
11:30 a.m.
1.4 Range and Damage Distributions in Ultra Low Energy Boron Ion
Implantation
N. Hatzopoulus, S. Suder, J. van der Berg, S.E. Donnelly, D.G.
Armour, D. Panknin*, W. Fukarek*, L. Frey**, M.A. Foad***,
S. Moffatt***, P. Bailey****, and C.T.Q. Noakes****, University
of Salford, Salford, UK; *Research Center Rossendorf, Dresden,
Germany; **Institut fur Interierte Schaltungen, Erlangen, Germany;
***Applied Materials Implant Division, Horsham, West Sussex, UK;
****CLRC Daresbury Lab, Warrington, Cheshire, UK
11:50 a.m.
1.5 Modeling of Damage Accumulation in Dynamic Simulations of Ion
Implantation into Single-Crystalline Silicon
M. Posselt, Research Center Rossendorf, Dresden, Germany
12:10 p.m. Lunch
Session 2: Shallow Junction Formation
Monday, June 17, 1:30 p.m.
Co-Chairs: Scott Luning , Advanced Micro Devices
Paul Packan , Intel
1:30 p.m.
2.1 Transient Enhanced Diffusion in Regrown Silicon (Invited)
K.S. Jones, University of Florida, Gainesville, FL
2:00 p.m.
2.2 Ultra-shallow Junction Formation Using Very Low Energy B and BF2 Sources
C.M. Osburn, D.F. Downey*, S.B. Felch**, and B.S. Lee**, North
Carolina State University, Raleigh, NC; *Varian Ion Implant Systems,
Gloucester, MA; **Varian Ginzton Research Center, Palo Alto, CA
2:20 p.m.
2.3 Transient Enhanced Diffusion and Defect Studies in B Implanted Si
J. Liu, J. Shi*, V. Krishnamoorthy, M.E. Law, and K.S. Jones,
University of Florida, Gainesville, FL; *SEMATECH, Austin, TX
2:40 p.m.
2.4 TED of Boron in Presence of EOR Defects: The Role of the Evolution
of Si Self-Interstitials Supersaturation Between the Loops
C. Bonafos, B. DeMauduit, A. Claverie, D. Alquier*, and A.
Martinez*, CEMES/CNRS, Toulouse Cedex, France; *LAAS/CNRS,
Toulouse Cedex, France
3:00 p.m. Break
3:20 p.m.
2.5 Dose Loss and Transient Enhanced Diffusion in Back End Thermal Cycles
S. Luning and N.H. Tripsas, Advanced Micro Devices, Sunnyvale, CA
3:40 p.m.
2.6 A Simultaneous Study of Transient Enhanced Diffusion (TED) of Boron
and Phosphorus in Si+ Implanted Silicon
J. Xu and M.E. Law, University of Florida, Gainesville, FL
4:00 p.m.
2.7 Comparison of Transient Enhanced and Field Enhanced Diffusion
S. Luning, N.H. Tripsas, and D. Soza, Advanced Micro Devices,
Sunnyvale, CA
Poster Session 1 and Exhibits
Monday, June 17, 4:30-6:30 p.m.
6:30 p.m. Dinner
Poster Session 1 and Exhibits (continued)
Monday, June 17, 8:00-10:00 p.m.
Session 3: New Implant Tools
Tuesday, June 18, 8:30 a.m.
Co-Chairs: Geoff Ryding , Ibis Technology
Daniel Enloe , Intel
8:30 a.m.
3.1 Moore's Law: Implications for Ion Implant Equipment - An Equipment
Designer's Perspective (Invited)
N.R. White, Diamond Semiconductor Group Inc., Gloucester, MA
9:00 a.m.
3.2 Introducing the NV-GSD/VHE High Energy Implanter
S. Wilson and T. McIntyre, Eaton Corp., Semiconductor Equipment
Operations, Beverly, MA
9:20 a.m.
3.3 The Applied Materials xR80LE Ultra-Shallow Junction Ion Implanter
J. England, C. Burgess, S. Moffatt, M. Foad, and D. Armour*,
Applied Materials Implant Division, Horsham, West Sussex, UK;
*University of Salford, Salford, UK
9:40 a.m.
3.4 The VIISion 80 and VIISion 200: New High Current Ion Implantation
Systems for Greater Throughput with Excellent Performance at Low
to High Doses
P. Lunquist, B. Pedersen, D. Ackerman, and D. Brown, Varian Ion
Implant Systems, Gloucester, MA
10:00 a.m.
3.5 Performance Characteristics of the Genus Inc. TandetronTM 1520 MeV
Ion Implantation System
J.P. O'Connor, M. Chase, S. Richards, and N. Tokoro, Genus Inc.,
Ion Technology Division, Newburyport, MA
10:20 a.m. Break
Session 4: Advanced Implanter Systems
Tuesday, June 18, 10:40 a.m.
Co-Chairs: Michael Vella , Electro-Graph
Ken Steeples , Hitachi
10:40 a.m.
4.1 The Ibis 1000 SIMOX Production Implanter
G. Ryding, T.H. Smick, M. Farley, B. Cordts, B. Dolan, L.P. Allen,
B. Mathews, B. Wray, B. Amundsen, and M. Anc. Ibis Technology, Danvers, MA
11:00 a.m.
4.2 The Ion Beam Optics of a Single Wafer High Current Ion Implanter
N.R. White, Diamond Semiconductor Group Inc., Gloucester, MA
11:20 a.m.
4.3 SDS Gas Source Feed Materials Systems for Ion Implantation
R.L. Brown, IBM, Microelectronics Division, Essex Junction, VT
11:40 a.m.
4.4 Advanced Microwave Ion Source for 100mA-class SIMOX Ion Implantation
K. Tokiguchi, T. Seki, K. Amemiya, and Y. Yamashita, Hitachi,
Hitachi-shi, Ibaraki-ken, Japan
12:00 Noon Lunch
Session 5: Materials Science
Tuesday, June 18, 1:30 p.m.
Co-Chairs: Dave Eaglesham , Lucent Technologies
Jim Slinkman , IBM
1:30 p.m.
5.1 Quantitative Study of the Evolution of Point Defects and Clusters
in Ion-Implanted Si During Transient Enhanced Diffusion
J.L. Benton, P.S. Kringhoj*, D.J. Eaglesham, J.M. Poate, S.
Libertino**, and S. Coffa**, Bell Laboratories, Lucent Technologies,
Murray Hill, NJ; *Aarhus University, Aarhus, Denmark;
**Consiglio Nazionale Delle Ricerche, Cantania, Italy
1:50 p.m.
5.2 Implant Activation and Redistribution of Dopants in GaN
J.C. Zolper, S.J. Pearton*, R.G. Wilson**, and R.A. Stall***,
Sandia National Laboratories, Albuquerque, NM; *University of Florida,
Gainesville, FL; **Hughes Research Laboratories, Malibu, CA; ***Emcore
Corp., Somerset, NJ
2:10 p.m.
5.3 Evolution of Surface and Interface Roughness After Thermal
Oxidation of Implanted Silicon Wafers
V. Raineri, F. Iacona, and F. La Via, C.N.R.-I.Me.Te.M., Catania, Italy
2:30 p.m.
5.4 Electrical Properties of NMOS Devices with Carbon Channel Implants
I. Ban and M.C. =D6zt=FCrk, North Carolina State University,
Raleigh, NC
2:50 p.m. Break
3:10 p.m.
5.5 Damage Evolution in Low Energy High Dose As+ Implanted Si
V. Krishnamoorthy, D. Venables*, and K.S. Jones, University of
Florida; *North Carolina State University, Raleigh, NC
3:30 p.m.
5.6 Si-Ge and Si-Ge-C Surface Alloy Formation Using High-Dose
Implantation and Solid Phase Epitaxy
X. Lu and N.W. Cheung, University of California, Berkeley, CA
3:50 p.m.
5.7 Fluorine Effects in BF2+ Implants at Various Energies
S.B. Felch, D.F. Downey*, and R.J. Eddy*, Varian Research Center,
Palo Alto, CA; *Varian Ion Implant Systems, Gloucester, MA
Poster Session 2 and Exhibits
Tuesday, June 18, 4:30-6:30 p.m.
6:30 p.m. Dinner
Poster Session 2 and Exhibits (continued)
Tuesday, June 18, 8:00-10:00 p.m.
Session 6: Implant System Enhancements
Wednesday, June 19, 8:30 a.m.
Co-Chairs: John O'Connor , Genus
Hans Glawishnig , IBM
8:30 a.m.
6.1 Performance and Lifetime of the Extended Life Ion Source
T. Horsky, T. McIntyre, F. Sinclair, J. Chen, W. Reynolds, R.
Cloutier, F. Trueira, W. Loizides, W. Bintz, J. Neroda, J. Grant,
and S. Wilson, Eaton Corp., Semiconductor Equipment Operations, Beverly, MA
8:50 a.m.
6.2 Improved Pumping Strategy for Ion Implanter End Stations
P.A. Lessard, G.S. Ash, and R. Unger, CTI-Cryogenics, Mansfield, MA
9:10 a.m.
6.3 High Frequency Ion Sources for Ion Implanters - A Theoretical and
Practical Comparison
H. Ito and N. Sakudo*, Applied Materials Implant Division, Horsham,
West Sussex, UK; Kanazawa Institute of Technology, Kanazawa-South,
Ishikawa, Japan
9:30 a.m.
6.4 End Station and Beam Line Design Consideration for Photo Resist
Outgassing with High Energy (MeV) Ion Implantation
J.P. O'Connor, N. Tokoro, T. Sakase, and R. Lafontaine, Genus Inc.,
Ion Technology Division, Newburyport, MA
9:50 a.m.
6.5 Post-Analysis Beam Deceleration Using Programmable Resistance
Control in the Applied Materials Precision Implant xR80
B.F. Harrison and L. Lane, Applied Materials Implant Division,
Horsham, West Sussex, UK
10:10 a.m. Break
Session 7: Trends in Processing and Devices
Wednesday, June 19, 10:30 a.m.
Co-Chairs: Michael Current , Applied Materials
Carlton Osburn , North Carolina State University
10:30 a.m.
7.1 Ion Implant Process and Device Trends (Invited)
R.L. Brown and D.W. Greenwell, IBM Microelectronics Division, Essex
Junction, VT
11:00 a.m.
7.2 Suppression of Ion-Induced Charge Collection Against Soft Errors
T. Kisiiimoto, M. Takai, Y. Ohno*, H. Sayama*, T. Nishimura*, Osaka
University, Osaka, Japan; *Mitsubishi Electric Corp., Itami, Hyogo, Japan
11:20 a.m.
7.3 Epi Avoidance for CMOS Logic Devices Using MeV Implantation
J.O. Borland, D. Daniels*, J. Walker*, and D. Wristers**, Genus
Inc., Newburyport, MA; *Symbios Logic, Colorado Springs, CO; **Advanced
Micro Devices, Austin, TX
11:40 a.m.
7.4 Life Below 1 keV
S. Moffatt, Applied Materials Implant Division, Horsham, West
Sussex, UK
12:00 Noon - 9:00 p.m. Lunch and Tour to Texas Hill Country, BBQ Dinner at
Tasch Ranch
Poster Session 3 and Exhibits
Wednesday, June 19, 9:00 p.m. - 12:00 Midnight
Session 8: Charging Control
Thursday, June 20, 8:30 a.m.
Co-Chairs: T.C. Smith , Motorola
Dennis Kamenitsa , Eaton
8:30 a.m.
8.1 Ion Implantation Damage in a Quarter Micron CMOS Technology
K. Bala, J. Hoepfner*, H. Tanimoto**, S. Takedai**, and B.
El-Kareh, IBM, *Siemens, **Toshiba, IBM Semiconductor Research and
Development Center, Hopewell Junction, NY
8:50 a.m.
8.2 Wafer Charge Neutralization Systems - Simulation and Experiment
S. Mehta, S. Walther, C.-H. Ng*, and M.E. Mack, Varian Ion Implant
Systems, Gloucester, MA; *Advanced Micro Devices, Sunnyvale, CA
9:10 a.m.
8.3 Gate Oxide Damage Measured with a Unique GOI Structure
S. Leung, H. Ito*, C. Park**, and Y.H. Kim***, Applied Materials,
Austin, TX; *Applied Materials Implant Division, Horsham,
West Sussex, UK; **Applied Materials Korea, Icheon-gun,
Kyonggi-do, Korea; ***Hyundai Electronics Industries Co.,
Ichen-kun, Kyoungki-do, Korea
9:30 a.m.
8.4 Beam-Plasma Concepts for Wafer Charging Control During Ion Implantation
M.I. Current, M.C. Vella*, and W. Lukaszek**, Applied Materials,
Austin, TX; *University of California, Berkeley, Ca; **Wafer Charge
Monitors, Woodside, Ca
9:50 a.m..
8.5 An Electro/Optical Approach to Characterize Wafer Charging in Ion
Implantation
A. Stuber, C.-H. Ng*, J. Lowell**, S. Mehta***, and S. Todorov***,
Advanced Micro Devices, Austin, TX; *Advanced Micro Devices,
Sunnyvale, CA; **NSF Science and Technology Center, University of
Texas, Austin, TX; ***Varian Ion Implant Systems, Gloucester, MA
10:10 a.m. Break
Session 9: Process Control
Thursday, June 20, 10:30 a.m.
Co-Chairs: Mitch Taylor, Intel
Dan Downey, Varian Ion Implant Systems
10:30 a.m.
9.1 Profile Analysis of a 0.25um CMOS Process
M.I. Current, M. Scotney-Castle, D. McCarron, V. Chia*, S.
Prussin**, and L. Larson***, Applied Materials, Austin, TX;
*Charles Evans and Associates, Redwood City, CA; **UCLA,
Los Angeles, CA; ***SEMATECH, Austin, TX
10:50 a.m.
9.2 Accurate Dose Matching Between Different Ion Implanters
R. Callahan, S. Falk, and P. Lunquist, Varian Ion Implant Systems,
Gloucester, MA
11:10 a.m.
9.3 Photoresist Outgassing and UV Curing in High Energy Implantation
M. Jones, Y. Erokin, L. Insalaco*, D. Whiteside*, and S. Slater*,
Eaton Corp., Semiconductor Equipment Operations, Beverly, MA; *Fusion
Semiconductor Systems, Rockville, MD
11:30 a.m.
9.4 In-situ RBS for Oxygen Ion Implantation Systems
M. Farley, L.P. Allen, T. Smick, G. Ryding, and K. Purser*, Ibis
Technology, Danvers, MA; *Southern Cross Corp., Danvers, MA
11:50 a.m. Lunch
Session 10: Contamination Control
Thursday, June 20, 1:20 p.m.
Co-Chairs: Bob Brown , IBM
Chuck Yarling , EESPEC
1:20 p.m.
10.1 On the Use of Secondary Ion Mass Spectrometry for Process Control
in Ion Implantation Technology (Invited)
C.W. Magee, Evans East, Plainsboro, NJ
1:50 p.m.
10.2 Mechanisms of Elemental Contamination in Ion Implantation Equipment
M.T. Wauk, A. Murrell, D. Wagner, and P. Edwards, Applied Materials
Implant Division, Horsham, West Sussex, UK
2:10 p.m.
10.3 Use of Accelerator Mass Spectrometry for Detection of Contamination
During Ion Implantation
Z.Y. Zhao, S. Mehta, S.A. Datar*, S.N. Renfrow*, and F.D.
McDaniel*, Varian Ion Implant Systems, Gloucester, MA;
*University of North Texas, Denton, TX
2:30 p.m.
10.4 Applications of Surface Analytical Techniques for Metals Reduction
in Ion Implantation
D.F. Downey, P.J. Sullivan, and P. Switchenko, Varian Ion Implant
Systems, Gloucester, MA
2:50 p.m. Break
3:10 p.m.
10.5 Effects of Beam Energy Purity on Junction Depths in Submicron Devices
L.M. Rubin and W. Morris*, Eaton Corp., Semiconductor Equipment
Operations, Beverly, MA; *Silicon Engineering, Austin, TX
3:30 p.m.
10.6 Elemental Analysis of Particles Added During Ion Implantation
J. England, R. Mitchell, M. McLaren, and Y. Uritsky*, Applied
Materials Implant Division, Horsham, West Sussex, UK; *Applied
Materials, Santa Clara, CA
3:50 p.m.
10.7 Replacing Silicon Monitors With In-situ Particle Monitoring in the
GSD200 Ion Implanter
J. Malenfant, J. Sedgewick*, R. Burghard**, IBM Microelectronics
Division, Essex Junction, VT; *Eaton Corp., Semiconductor Equipment
Operations, Beverly, MA; **High Yield Technology, Sunnyvale, CA
5:30-11:00 p.m. Dinner and Dance at Dance Across Texas
Poster Session 4 and Exhibits
Thursday, June 20, 9:00 p.m. - 12:00 Midnight
Session 11: Future Trends and Applications
Friday, June 21, 8:30 a.m.
Co-Chairs: Walter Class , Eaton
Nathan Cheung , University of California, Berkeley
8:30 a.m.
11.1 Ion Beam Synthesis of Nanocrystals and Quantum Dots in Optical
Materials (Invited)
C.W. White, Oak Ridge National Laboratory, Oak Ridge, TN
9:00 a.m.
11.2 Cluster Ion Implantation for Shallow Junction Formation
J. Matsuo and I. Yamada, Kyoto University, Kyoto, Japan
9:20 a.m.
11.3 Formation of Deep Sub-Micron Buried Channel pMOSFETs With Plasma
Doping (PLAD)
S.B. Felch, B.S. Lee, D.P. Brunco, A. Ahmad*, K. Prall*, and D.L.
Chapek*, Varian Research Center, Palo Alto, CA;
*Micron Technology, Inc., Boise, ID
9:40 a.m.
11.4 Buried Layer-Connecting Layer High Energy Implantation for Improved
CMOS Latch-up
W. Morris and L.M. Rubin*, Silicon Engineering, Austin, TX; *Eaton
Corp., Semiconductor Equipment Operations, Beverly, MA
10:00 a.m.
11.5 Improvement of Lateral Isolation by Buried Recombination Layers
Formed by High Energy Implantation of C or O into Silicon
S. Bogen, M. Herden, H. Ryssel, and L. Frey, Fraunhofer-Institut
fur Integrierte Schaltungen, Erlangen, Germany; *University
Erlangen-Nornberg, Erlangen, Germany
10:20 a.m. Break
Session 12: Manufacturing Applications
Friday, June 21, 10:40 a.m.
Co-Chairs: John Lowell , NSF Science and Technology Center, University
of Texas at Austin
Masataka Kase , Fujitsu
10:40 a.m.
12.1 Experimental Design for Equipment Qualification and Matching
N.H. Tripsas and R. Johnson, Advanced Micro Devices, Sunnyvale, CA
11:00 a.m.
12.2 Complete Management of Implant Microprocessing Risk Through
Computer Automation
B. Axan, Motorola, Mesa, AZ
11:20 a.m.
12.3 Manufacturing Advantages of Single Wafer High Current Ion Implantation
M. Sieradzki, Diamond Semiconductor Group, Gloucester, MA
11:40 a.m.
12.4 A Model for Maximization of Real Product Throughput on High Current
Implant Tools
J.W. Wilson, P. McDonagh*, D.W. Wagner*, and D. Braley**, Motorola,
Austin, TX; *Applied Materials, Inc., Austin, TX; **Applied Materials,
Inc., Colorado Springs, CO
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