SYMPOSIUM ON
Process Control, Diagnostics, and Modeling
in
Semiconductor Manufacturing I
Spring Electrochemical Society Meeting Reno, Nevada 21 - 26 May 1995
This Symposium is part of the Spring Electrochemical Society
Meeting. It will be held in Reno, Nev May 21-26, 1995. The
SEMATECH control PTAB and modeling PTAB meetings will be held in
conjunction with the symposium to reduce industrial travel. The
expected mixture of university and industrial participants will
make for an exciting symposium. Note that the due date for
Extended Abstracts has been extended to Dec. 15.
If you would like to submit a paper, please e-mail
butler@spdc.ti.com your postal address and I will send you the
instructions and forms. The forms are also available in The
Electrochemical Society's Interface (bulletin).
Schedule
Other Information
Process Control, Diagnostics, and Modeling
in Semiconductor Manufacturing I
This symposium is aimed at bringing together the technical community
involved in various aspects of process control, process diagnostics,
and modeling in semiconductor manufacturing. Topics relating to
automation, i.e., computer controlled feedback and feedforward of
information for controlling a single process, or a series of processes,
will also be highlighted. Processes of interest include, but are not
limited to, CVD, PVD, PECVD, etching, RTP, cleaning, and lithography.
Sessions will be organized around coherent subjects in order to
facilitate useful discussions and focus on appropriate solutions to
problems.
Original technical work or substantial review papers are solicited.
Suggested topics include control methodologies, modeling approaches,
and in situ measurement techniques. Papers focusing on the use of
fundamental equipment/process models to generate control strategies and
controller models are also requested. Other appropriate themes are the
relationship between modeling and control, calibration techniques, and
automation issues. Papers focusing on application to commercial tools
are also desirable. Publication of a proceedings volume is planned.
Papers published in a proceedings volume may also be submitted to the
JOURNAL, but must be received no later than six months after the date
of the symposium at which the paper was presented.
Authors submitting abstracts are requested to include in their extended
abstracts sections on objective, approach, results, and conclusion. A
clear statement of the problem being solved is advisable. A brief
description of the manufacturing process is also appropriate.
Abstracts, suggestions, and inquiries should be sent to one of the
symposium organizers:
M. Meyyappan, Scientific Research Associates, Inc.,
PO Box 1058,
Glastonbury, CT 06033,
Phone: (203)659-0333, Fax: (203)633-0676,
e-mail: meyya@srai.com;
D. J. Economou, Dept. of Chemical Eng.,
University of Houston, TX 77204-4792,
Phone: (713)743-4320, e-mail: economou@uh.edu
S. W. Butler, Texas Instruments,
PO Box 655012, MS 944,
Dallas, TX 75265,
Phone: (214)995-4241, e-mail: butler@spdc.ti.com
Detailed Program Information
PROCESS CONTROL, DIAGNOSTICS, AND MODELING IN
SEMICONDUCTOR MANUFACTURING I
Dielectric Science and Technology/Electronics
Monday, May 22, 1995
Capitol Room 3, Convention Level
PROCESS CONTROL, DIAGNOSTICS, AND MODELING IN
SEMICONDUCTOR MANUFACTURING I
Dielectric Science and Technology/Electronics
Tuesday, May 23, 1995
Capitol Room 3, Convention Level
R. Mundt, Chairman; M. Dalvie, Vice-Chairman
- 9:00
In Situ Real Time Diagnostics of Surfaces during Plasma Processing: A Review
- E. S. Aydil - 96
- 9:35
A Method to Determine the Infrared Optical Constants and Thickness of a Thin
Film from a Single Reflectance Spectrum - P. W. Morrison, Jr. - 97
- 9:55
Normal Incidence Reflectance: A Robust Tool for In Situ Real-Time Measurement
of Growth Rates and Optical Constants of CVD-Grown Semiconductor Thin Films -
W. C. Breiland, T. M. Brannan, H. C. Chui, B. E. Hammons, and K. P. Killeen -
98
- 10:15
Characterizations of Metallic and Organic Contamination on Silicon Surfaces
and the Influence of the Contaminants on Gate Oxide Quality - X. Liu and E.
A. Irene - 99
- 10:35
Ten-minute Intermission
- 10:45
A Neural Network Model of a Contact Plasma Etch Process - E. A. Rietman - 100
- 11:05
Real-Time Optical Diagnostics for 0.25 ~m
Optical Emission, Full Wafer Interferometry, and UV-Visible Ellipsometry - J.
T. C. Lee, H. L. Maynard, N. Blayo, and D. E. Ibbatson - 101
- 11:25
Application of Raman Spectroscopy for SC-1 Processing Bath Concentration
Control - M. J. Pelletier, R.>
Transfer interrupted!